smd type transistors 1 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 features for general af applications. high collector current. high current gain. low collector-emitter saturation voltage. www.kexin.com.cn absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -45 v emitter-base voltage v ebo -5 v collector current (dc) i c -500 ma peak collector current i cm -1 a base current i b -100 ma power dissipation p d 310 mw junction temperature t j 150 storage temperature t stg -65to+150 pnp silicon af transistors KC807A(bc807a) marking no. KC807A-16 KC807A-25 KC807A-40 marking 5a 5b 5c electrical characteristics ta = 25 symbol testconditons min typ max unit v cbo i c =-10 a, i e =0 -50 v v ceo i c =-10ma,i b =0 -45 v v ebo i e =-10 a, i c =0 -5 v v cb =-25v,i e = 0 -100 na v cb =-25v,i e =0,t a = 150 -50 a i ebo v eb =-4v,i c = 0 -100 na KC807A-16 100 160 250 KC807A-25 160 250 400 KC807A-40 250 350 630 v ce(sat) i c = -500 ma, i b =-50ma -0.7 v v be(sat) i c = -500 ma, i b =-50ma -1.2 v c cb v cb = -10 v, f = 1 mhz 10 pf ceb v eb = -0.5 v, f = 1 mhz 60 pf f t i c =-50ma,v ce = -5 v, f = 100 mhz 200 mhz * pulsed: pw 350 s, duty cycle 2% base to emitter voltage * collector cutoff current collector-base capacitance transition frequency emitter-base capacitance collector saturation voltage * i c = -100 ma, v ce =-1v parameter emitter cutoff current dc current gain * emitter-to-base breakdown voltage h fe i cbo collector-to-base breakdown voltage collector-to-emitter breakdown voltage
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